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IBM

Samsung and IBM have stated that their new chip design can drastically improve performance and energy efficiency

Samsung and IBM have stated that their new chip design can drastically improve performance and energy efficiency
The Siliconreview
15 Decemebr, 2021

The new Vertical Transport Field Effect Transistors (VTFET) is all set to overthrow the existing FinFET techs that are widely used in most advanced chips

Tech giants Samsung and IBM have recently made an announcement regarding advancement in semiconductor design. Reportedly, the companies have found a new way to stack the resistors vertically on a chip (usually, the transistor would be lying on the surface of the semiconductor. The new Vertical Transport Field Effect Transistors (VTFET) is set to overthrow the existing FinFET techs widely used in most advanced chips. VTFET will also be applicable for chips that are known for their densely packed transistors. The latest design is meant to allow the current to flow vertically instead of its traditional horizontal approach. FinFET already offers vertical designs in some of its semiconductors, and Intel’s future releases might also move towards the same.

Right now, the focus is on stacking chip components instead of individual transistors. The latest approach makes sense because when we really don’t have a place to add more chips on a plane, then the only obvious choice is to go up. While we understand that VTFET designs will take time to be used in consumer chips, the two companies have already made big claims regarding performance and energy efficiency. Samsung and IBM are also giving out some ambitious use cases for the VTFET.